BSIM4, as the extension of BSIM3 model, addresses the MOSFET physical Capital and italic alphanumericals in this manual are model. Modeling Package to measure and extract BSIM4 model parameters. This part of the manual provides some background information to make necessary. The model parameters of the BSIM4 model can be divided into several groups. For more details about these operation modes, refer to the BSIM4 manual [1].

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The model parameters of the BSIM4 model can be divided into several groups. The main model parameters are used to model the key physical effects in the DC and CV behavior of submicron MOS devices at room temperature.

Here they are grouped into subsections related to the physical effects of the MOS transistor. The second group of parameters are the process related parameters.

### BSIM MOSFET Model User Manual_百度文库

They should only be changed if a detailed knowledge bbsim4 a certain MOS production process is given. The third group of parameters are the temperature modeling parameters.

Finally the last group contains flags to select certain modes of operations manyal user definable model parameters. For more details about these operation modes, refer to the BSIM4 manual [1]. Note Underlined values in bold italics are defaults, underlined comments in italics in brackets are valid for default model selector values. Electrical gate equivalent oxide thickness. Physical gate equivalent oxide thickness. Gate oxide thickness at which parameters are extracted.

Body-effect coefficient near the surface. Body-effect coefficient in the substrate. Poly Si-gate doping concentration. Manaul doping concentration at depletion edge for zero body bias.

If both are not given: V bs at which depletion region equals XT. Gate electrode sheet resistance. Zero bias threshold voltage variation. Non-uniform vertical doping effect on surface potential. First-order body effect coefficient. Second-order body effect coefficient. Body effect coefficient of K3. Lateral non-uniform doping effect on K1.

Maximum applied body bias in VTH0 calculation. First coefficient of short-channel effect on VTH. Second coefficient of short-channel effect on VTH. Body-bias coefficient of short-channel effect on VTH. First coefficient of drain-induced V th shift for long-channel pocket devices.

Second coefficient of drain-induced V th shift for long-channel pocket devices. First coefficient of narrow-width effect on VTH for small channel length.

Second coefficient of narrow-width effect on VTH for small channel length. Body-bias coefficient of narrow-width effect on VTH for small channel length. DIBL coefficient in the subthreshold region.

## BSIM 4.1.0 MOSFET Model-User’s Manual

Body-bias for the subthreshold DIBL effect. DIBL coefficient exponent in subthreshold region. First-order mobility degradation coefficient due to vertical field. Second-order mobility degradation coefficient. Coefficient of the body-bias effect of mobility degradation. Mobility coulomb scattering coefficient.

Mobility channel length coefficient. Mobility channel length exponential coefficient. Bulk charge effect coefficient. First non-saturation effect factor. Second non-saturation effect factor.

Coefficient of V gs dependence of bulk charge effect. Bulk charge effect coeff. Bulk charge effect width offset.

Body-bias coefficient of the bulk charge effect. Offset voltage in subthreshold region for large W and L.

Channel length dependence of VOFF. V gsteff fitting parameter for moderate inversion condition. Drain-Source to channel coupling capacitance. Body-bias coefficient of CDSC. Drain-bias coefficient of CDSC. Channel width dependence parameter of LDD resistance. Body bias coefficient of LDD resistance. Gate bias bsum4 of LDD resistance. Number of source diffusion squares.

Number of drain diffusion squares.

### BSIM MOSFET Model-User’s Manual | EECS at UC Berkeley

Channel width offset parameter. Power of length dependence for width offset. Power of width dependence for width offset. Channel length offset parameter. Power of length dependence for length offset.

Power of width dependence for length offset. Coefficient of length dependence for CV channel length offset. Coefficient of width dependence for CV channel length offset. Coefficient of length and width cross term dependence for CV channel length offset. Coefficient of length dependence for CV channel width offset. Coefficient of width dependence for CV channel width offset. Coefficient of length and width cross term dependence for CV channel width offset. Coefficient of gate bias dependence of W eff.

Coefficient bskm4 substrate bias dependence of W eff. Channel length modulation parameter. First output resistance DIBL effect parameter.

Second output beim4 DIBL effect parameter. Body bias coefficient of output resistance DIBL effect. Channel-length dependence coefficient of the DIBL effect on output resistance. First substrate current induced body-effect parameter. Second substrate current induced body-effect coefficient. Gate-bias dependence of Early voltage. Effect of pocket implant on R out degradation. Impact of drain-induced V th shift on R out.

Channel-length dependence of drain-induced V th shift on R out. V ds dependence of drain-induced V th shift gsim4 R out. First impact ionization parameter. Length dependent substrate current parameter. First VDS dependent parameter of impact ionization current. Second VDS dependent parameter of impact ionization current. Third VDS dependent parameter of impact ionization current. Nominal drain saturation voltage at threshold for impact ionization current.

Temperature dependent parameter for impact ionization current. Channel length dependent parameter at threshold for impact ionization current. Saturation channel electric field for impact ionization current. First VGS dependent parameter for impact ionization current. Second VGS dependent parameter for impact ionization current. Third VGS dependent parameter for impact ionization current.